onsemi NTB N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S
- RS Stock No.:
- 277-040P
- Mfr. Part No.:
- NTBG023N065M3S
- Manufacturer:
- onsemi
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View bulk pricing optionsSubtotal 10 units (supplied on a continuous strip)*
PHP7,338.00
(exc. VAT)
PHP8,218.60
(inc. VAT)
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In Stock
- 595 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 10 - 99 | PHP733.80 |
| 100 - 499 | PHP676.09 |
| 500 - 999 | PHP627.79 |
| 1000 + | PHP510.01 |
*price indicative
- RS Stock No.:
- 277-040P
- Mfr. Part No.:
- NTBG023N065M3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 263W | |
| Forward Voltage Vf | 6V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | |
| Height | 15.4mm | |
| Width | 9.9mm | |
| Length | 9.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 263W | ||
Forward Voltage Vf 6V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | ||
Height 15.4mm | ||
Width 9.9mm | ||
Length 9.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
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