DiodesZetex Type P-Channel MOSFET, 450 mA, 60 V Enhancement, 4-Pin SOT-223 ZVP2106GTA
- RS Stock No.:
- 275-967
- Mfr. Part No.:
- ZVP2106GTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP179.08
(exc. VAT)
PHP200.57
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 60 unit(s) ready to ship from another location
- Plus 6,005 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP35.816 | PHP179.08 |
| 25 - 95 | PHP34.74 | PHP173.70 |
| 100 - 245 | PHP33.698 | PHP168.49 |
| 250 - 495 | PHP32.688 | PHP163.44 |
| 500 + | PHP31.708 | PHP158.54 |
*price indicative
- RS Stock No.:
- 275-967
- Mfr. Part No.:
- ZVP2106GTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 450mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.72V | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q104, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 450mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.72V | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Height 1.65mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q104, AEC-Q101 | ||
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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