ROHM RQ3 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 8-Pin HSMT-8 RQ3P270BKFRATCB
- RS Stock No.:
- 265-255
- Mfr. Part No.:
- RQ3P270BKFRATCB
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
PHP576.03
(exc. VAT)
PHP645.15
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 10 - 90 | PHP57.603 | PHP576.03 |
| 100 - 240 | PHP54.722 | PHP547.22 |
| 250 - 490 | PHP50.708 | PHP507.08 |
| 500 - 990 | PHP46.693 | PHP466.93 |
| 1000 + | PHP44.947 | PHP449.47 |
*price indicative
- RS Stock No.:
- 265-255
- Mfr. Part No.:
- RQ3P270BKFRATCB
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSMT-8 | |
| Series | RQ3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 27.0mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 13.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSMT-8 | ||
Series RQ3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 27.0mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 13.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is an ideal solution for Advanced Driver Assistance Systems, infotainment, lighting and body applications. Its robust construction ensures reliable operation in demanding automotive environments. Realization of high mounting reliability by original terminal and plating treatment.
RoHS compliant
AEC Q101 Qualified
Small high powered package
Related links
- ROHM RQ3 Type P-Channel MOSFET 40 V Enhancement, 8-Pin HSMT-8 RQ3G270BJFRATCB
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L070BGTB1
- ROHM RQ3 Type N-Channel MOSFET 8-Pin HSMT-8 RQ3L060BGTB1
- ROHM RQ3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BKFRATCB
- ROHM RQ3 Type P-Channel MOSFET 40 V Enhancement, 8-Pin HSMT-8 RQ3G120BJFRATCB
- ROHM RQ3 Type P-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BJFRATCB
- ROHM HT8KE6 2 Type N-Channel MOSFET Arrays 100 V Enhancement, 8-Pin HSMT-8 HT8KE6HTB1
- ROHM RH6 1 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSMT-8 RH6L040BGTB1