ROHM RD3P06BBKH Type N-Channel MOSFET, 59 A, 100 V Depletion, 8-Pin TO-252 RD3P06BBKHRBTL
- RS Stock No.:
- 264-943
- Mfr. Part No.:
- RD3P06BBKHRBTL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
PHP661.53
(exc. VAT)
PHP740.915
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 135 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 5 - 45 | PHP132.306 | PHP661.53 |
| 50 - 95 | PHP125.862 | PHP629.31 |
| 100 - 495 | PHP116.362 | PHP581.81 |
| 500 - 995 | PHP107.202 | PHP536.01 |
| 1000 + | PHP103.134 | PHP515.67 |
*price indicative
- RS Stock No.:
- 264-943
- Mfr. Part No.:
- RD3P06BBKHRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | RD3P06BBKH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series RD3P06BBKH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET, engineered for robust applications requiring high efficiency and reliability. With a breaking voltage of up to 100V and a continuous drain current of 59A, this device is designed for demanding tasks in automotive and industrial environments. It features a compact DPAK/TO-252 package, allowing for easy integration into various circuit designs.
Suitable for various applications including automotive and industrial electronics
Pulsed drain current capability of up to 118A underscores versatility in demanding environments
Utilises Pd free plating ensuring compatibility with modern production processes
Related links
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 DMTH10H015SK3-13
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon IRF3710ZS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF3710ZSTRLPBF
- Infineon IRF3710ZS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF3710ZPBF
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8 ISC0804NLSATMA1