Infineon IRF3710ZS Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 162-3273
- Mfr. Part No.:
- IRF3710ZSTRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
PHP46,208.00
(exc. VAT)
PHP51,752.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | PHP57.76 | PHP46,208.00 |
| 1600 - 1600 | PHP56.027 | PHP44,821.60 |
| 2400 + | PHP54.346 | PHP43,476.80 |
*price indicative
- RS Stock No.:
- 162-3273
- Mfr. Part No.:
- IRF3710ZSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF3710ZS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF3710ZS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Automotive Standard AEC-Q101 | ||
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Related links
- Infineon IRF3710ZS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF3710ZSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF3710ZPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 DMTH10H015SK3-13
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1
- Infineon IPD Type N-Channel MOSFET 100 V N, 3-Pin TO-252
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8 ISC0804NLSATMA1