ROHM RJ1 1 N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1

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Subtotal 20 units (supplied on a continuous strip)*

PHP5,462.20

(exc. VAT)

PHP6,117.60

(inc. VAT)

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  • Plus 100 unit(s) shipping from October 12, 2026
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Units
Per Unit
20 - 198PHP273.11
200 - 998PHP252.355
1000 - 1998PHP234.19
2000 +PHP190.08

*price indicative

Packaging Options:
RS Stock No.:
264-884P
Mfr. Part No.:
RJ1P07CBHTL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263AB

Series

RJ1

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

73.0nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

135W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 120A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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