ROHM HP8J 2 Type P-Channel MOSFET, 12.5 A, 100 V Enhancement, 8-Pin HSOP-8 HP8JE5TB1
- RS Stock No.:
- 264-654
- Mfr. Part No.:
- HP8JE5TB1
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 5 units)*
PHP546.87
(exc. VAT)
PHP612.495
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 95 unit(s) shipping from May 18, 2026
- Plus 2,500 unit(s) shipping from July 30, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 5 - 45 | PHP109.374 | PHP546.87 |
| 50 - 95 | PHP103.93 | PHP519.65 |
| 100 - 495 | PHP96.214 | PHP481.07 |
| 500 - 995 | PHP88.50 | PHP442.50 |
| 1000 + | PHP85.322 | PHP426.61 |
*price indicative
- RS Stock No.:
- 264-654
- Mfr. Part No.:
- HP8JE5TB1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOP-8 | |
| Series | HP8J | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 127mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38.0nC | |
| Maximum Power Dissipation Pd | 21W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOP-8 | ||
Series HP8J | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 127mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38.0nC | ||
Maximum Power Dissipation Pd 21W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM Semiconductor is a dual P-channel MOSFET designed for efficient switching and motor drive applications. It features a low on-resistance and high power dissipation, making it ideal for high-performance circuits. The device is housed in an 8-HSOP package, ensuring compact and reliable surface mounting.
RoHS compliant
High power Package
Pb free plating
Halogen Free
Rg and UIS tested
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