ROHM R80 Type N-Channel MOSFET, 19 A, 800 V Enhancement, 3-Pin TO-220FM R8019KNXC7G
- RS Stock No.:
- 264-561
- Mfr. Part No.:
- R8019KNXC7G
- Manufacturer:
- ROHM
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Subtotal (1 unit)*
PHP317.69
(exc. VAT)
PHP355.81
(inc. VAT)
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In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP317.69 |
| 10 - 99 | PHP286.27 |
| 100 - 499 | PHP263.58 |
| 500 - 999 | PHP244.37 |
| 1000 + | PHP198.99 |
*price indicative
- RS Stock No.:
- 264-561
- Mfr. Part No.:
- R8019KNXC7G
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FM | |
| Series | R80 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.265Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FM | ||
Series R80 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.265Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 800V 19A power MOSFET in a TO-220FM package is a high-speed switching super junction MOSFET designed for high efficiency. It enables improved performance in PFC and LLC circuits by achieving higher efficiency through high-speed switching.
Low on-resistance
Fast switching
Parallel use is easy
Pb-free lead plating and RoHS compliant
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