Nexperia PSM Type N-Channel MOSFET, 325 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40SSHJ
- RS Stock No.:
- 219-472
- Mfr. Part No.:
- PSMN1R0-40SSHJ
- Manufacturer:
- Nexperia
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PHP226.05
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PHP253.18
(inc. VAT)
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- 2,000 unit(s) ready to ship from another location
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP226.05 |
| 10 - 99 | PHP203.35 |
| 100 - 499 | PHP187.64 |
| 500 - 999 | PHP173.68 |
| 1000 + | PHP156.23 |
*price indicative
- RS Stock No.:
- 219-472
- Mfr. Part No.:
- PSMN1R0-40SSHJ
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 325A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 137nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 8 mm | |
| Height | 1.6mm | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 325A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 137nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 8 mm | ||
Height 1.6mm | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
Avalanche rated
Wave solder able
Superfast switching with soft recovery
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