MPN

IXYS HiperFET, Polar N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227

Name: IXYS HiperFET, Polar N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227
Brand: IXYS
SKU: 194-568P
Availability: InStock

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Subtotal 10 units (supplied in a tube)*

PHP20,751.30

(exc. VAT)

PHP23,241.50

(inc. VAT)

In Stock

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	61A
	Maximum Drain Source Voltage Vds	500V
	Package Type	SOT-227
	Series	HiperFET, Polar
	Mount Type	Panel
	Pin Count	4
	Maximum Drain Source Resistance Rds	85mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	150nC
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	700W
	Maximum Operating Temperature	150°C
	Height	9.6mm
	Width	25.42mm
	Standards/Approvals	No
	Length	38.23mm
	Automotive Standard	No

	Select all
	Brand IXYS
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 61A
	Maximum Drain Source Voltage Vds 500V
	Package Type SOT-227
	Series HiperFET, Polar
	Mount Type Panel
	Pin Count 4
	Maximum Drain Source Resistance Rds 85mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 150nC
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 700W
	Maximum Operating Temperature 150°C
	Height 9.6mm
	Width 25.42mm
	Standards/Approvals No
	Length 38.23mm
	Automotive Standard No

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

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