IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin SOT-227

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal 10 units (supplied in a tube)*

PHP20,754.30

(exc. VAT)

PHP23,244.80

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 173 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
10 - 49PHP2,075.43
50 - 99PHP2,013.14
100 - 249PHP1,952.72
250 +PHP1,894.14

*price indicative

Packaging Options:
RS Stock No.:
194-473P
Mfr. Part No.:
IXFN48N60P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

150nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

625W

Maximum Operating Temperature

150°C

Length

38.23mm

Height

9.6mm

Standards/Approvals

No

Width

25.42mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy