MPN

IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V Enhancement, 4-Pin SOT-227

Name: IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V Enhancement, 4-Pin SOT-227
Brand: IXYS
SKU: 193-739P
Availability: InStock

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Subtotal 10 units (supplied in a tube)*

PHP24,545.70

(exc. VAT)

PHP27,491.20

(inc. VAT)

In Stock

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	115A
	Maximum Drain Source Voltage Vds	300V
	Series	HiperFET, Polar
	Package Type	SOT-227
	Mount Type	Panel
	Pin Count	4
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	185nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	700W
	Maximum Operating Temperature	150°C
	Width	25.07mm
	Height	9.6mm
	Length	38.2mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand IXYS
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 115A
	Maximum Drain Source Voltage Vds 300V
	Series HiperFET, Polar
	Package Type SOT-227
	Mount Type Panel
	Pin Count 4
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 185nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 700W
	Maximum Operating Temperature 150°C
	Width 25.07mm
	Height 9.6mm
	Length 38.2mm
	Standards/Approvals No
	Automotive Standard No

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

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