IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 200 V Enhancement, 4-Pin SOT-227

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Subtotal 5 units (supplied in a tube)*

PHP10,149.30

(exc. VAT)

PHP11,367.20

(inc. VAT)

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  • Shipping from May 14, 2027
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Units
Per Unit
5 +PHP2,029.86

*price indicative

Packaging Options:
RS Stock No.:
193-616P
Mfr. Part No.:
IXFN140N20P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

115A

Maximum Drain Source Voltage Vds

200V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Power Dissipation Pd

680W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

240nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

25.42mm

Standards/Approvals

No

Length

38.23mm

Height

9.6mm

Automotive Standard

No

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