N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P

RS Stock No.:: 193-464P
Mfr. Part No.:: IXFN102N30P
Manufacturer:: IXYS

N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P

This image is representative of the product range

Temporarily out of stock - back order for despatch 18/01/2025, delivery within 10 working days from desptach date

Price Each (Supplied in a Tube)

PHP1,486.16

(exc. VAT)

PHP1,664.50

(inc. VAT)

Units	Per Unit
10 - 49	PHP1,486.16
50 - 99	PHP1,441.57
100 - 249	PHP1,398.32
250 +	PHP1,356.38

RS Stock No.:: 193-464P
Mfr. Part No.:: IXFN102N30P
Manufacturer:: IXYS

IXFN 102N30P PolarHV HiPerFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	86 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar
Package Type	SOT-227B
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	570 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	25.42mm
Length	38.23mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	224 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 86 A, 300 V, 4-Pin SOT-227 IXYS IXFN102N30P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series