STMicroelectronics HB Type P-Channel MOSFET, 650 V Depletion, 9-Pin ACEPACK SMIT STGSH80HB65DAG

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Subtotal (1 reel of 200 units)*

PHP356,069.00

(exc. VAT)

PHP398,797.20

(inc. VAT)

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200 +PHP1,780.345PHP356,069.00

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RS Stock No.:
152-181
Mfr. Part No.:
STGSH80HB65DAG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type P

Maximum Drain Source Voltage Vds

650V

Series

HB

Package Type

ACEPACK SMIT

Mount Type

Surface

Pin Count

9

Channel Mode

Depletion

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

456nC

Forward Voltage Vf

1.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

33.20 mm

Standards/Approvals

Automotive-grade

Height

4.05mm

Length

25.20mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics device combines two IGBTs and diodes in half-bridge topology mounted on a very Compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch.

AQG 324 qualified

High-speed switching series

Minimized tail current

Tight parameter distribution

Low thermal resistance thanks to DBC substrate

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