STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 53 A, 650 V Enhancement, 8-Pin ACEPACK SMIT SH63N65DM6AG

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Subtotal (1 reel of 200 units)*

PHP384,803.40

(exc. VAT)

PHP430,979.80

(inc. VAT)

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200 +PHP1,924.017PHP384,803.40

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RS Stock No.:
152-112
Mfr. Part No.:
SH63N65DM6AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

650V

Series

MDmesh DM6

Package Type

ACEPACK SMIT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

64mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.55V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±25 V

Typical Gate Charge Qg @ Vgs

8nC

Maximum Power Dissipation Pd

424W

Maximum Operating Temperature

150°C

Standards/Approvals

AQG 324

Automotive Standard

AEC

COO (Country of Origin):
CN
The STMicroelectronics device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very Compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.

AQG 324 qualified

Half-bridge power module

650 V blocking voltage

Fast recovery body diode

Very low switching energies

Low package inductance

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