STMicroelectronics MDmesh II N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N

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Subtotal 50 units (supplied on a continuous strip)*

PHP7,745.20

(exc. VAT)

PHP8,674.60

(inc. VAT)

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Units
Per Unit
50 - 95PHP154.904
100 - 495PHP143.348
500 - 995PHP132.078
1000 +PHP127.162

*price indicative

Packaging Options:
RS Stock No.:
151-952P
Mfr. Part No.:
STD13NM60N
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

MDmesh II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.36Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

25V

Maximum Operating Temperature

150°C

Length

10.1mm

Height

2.4mm

Standards/Approvals

RoHS

Width

6.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance

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