STMicroelectronics STripFET Type N-Channel MOSFET, 75 A, 200 V Enhancement, 3-Pin TO-263 STB75NF20
- RS Stock No.:
- 151-918
- Mfr. Part No.:
- STB75NF20
- Manufacturer:
- STMicroelectronics
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Subtotal (1 reel of 1000 units)*
PHP201,814.00
(exc. VAT)
PHP226,032.00
(inc. VAT)
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- Shipping from April 17, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 + | PHP201.814 | PHP201,814.00 |
*price indicative
- RS Stock No.:
- 151-918
- Mfr. Part No.:
- STB75NF20
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | STripFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.034Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | 50°C | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 15.85mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series STripFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.034Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature 50°C | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 15.85mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET realized with unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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