STMicroelectronics SuperMESH Type N-Channel MOSFET, 1 A, 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4
- RS Stock No.:
- 151-905P
- Mfr. Part No.:
- STD1NK80ZT4
- Manufacturer:
- STMicroelectronics
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Subtotal 200 units (supplied on a reel)*
PHP5,048.40
(exc. VAT)
PHP5,654.20
(inc. VAT)
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Units | Per Unit |
|---|---|
| 200 - 480 | PHP25.242 |
| 500 - 980 | PHP23.388 |
| 1000 - 1980 | PHP21.48 |
| 2000 + | PHP20.717 |
*price indicative
- RS Stock No.:
- 151-905P
- Mfr. Part No.:
- STD1NK80ZT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Gate charge minimized
Very low intrinsic capacitance
Zener-protected