STMicroelectronics SuperMESH Type N-Channel MOSFET, 1 A, 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4

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PHP408.46

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PHP457.48

(inc. VAT)

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Per Unit
Per Tape*
20 - 180PHP20.423PHP408.46
200 - 480PHP19.417PHP388.34
500 - 980PHP17.991PHP359.82
1000 - 1980PHP16.523PHP330.46
2000 +PHP15.936PHP318.72

*price indicative

Packaging Options:
RS Stock No.:
151-905
Mfr. Part No.:
STD1NK80ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

SuperMESH

Pin Count

3

Maximum Drain Source Resistance Rds

16Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

45W

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

7.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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