STMicroelectronics SuperMESH Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 STD4NK80ZT4

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Subtotal 200 units (supplied on a reel)*

PHP15,824.40

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PHP17,723.40

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200 - 480PHP79.122
500 - 980PHP73.24
1000 - 1980PHP67.457
2000 +PHP64.92

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Packaging Options:
RS Stock No.:
151-900P
Mfr. Part No.:
STD4NK80ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

800V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

22.5nC

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

2.4mm

Width

6.6 mm

Length

10.1mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected