STMicroelectronics SuperMESH Type N-Channel MOSFET, 14 A, 500 V Enhancement, 3-Pin TO-247 STW15NK50Z
- RS Stock No.:
- 151-456
- Mfr. Part No.:
- STW15NK50Z
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP5,809.44
(exc. VAT)
PHP6,506.58
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 720 unit(s) ready to ship from another location
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 90 | PHP193.648 | PHP5,809.44 |
| 120 - 270 | PHP183.957 | PHP5,518.71 |
| 300 + | PHP170.407 | PHP5,112.21 |
*price indicative
- RS Stock No.:
- 151-456
- Mfr. Part No.:
- STW15NK50Z
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | SuperMESH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.34Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 50°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.15mm | |
| Length | 34.95mm | |
| Standards/Approvals | RoHS | |
| Width | 15.75 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series SuperMESH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.34Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 50°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 5.15mm | ||
Length 34.95mm | ||
Standards/Approvals RoHS | ||
Width 15.75 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Very good manufacturing repeatability
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