STMicroelectronics SuperMESH N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4

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Subtotal 200 units (supplied on a reel)*

PHP11,728.80

(exc. VAT)

PHP13,136.20

(inc. VAT)

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Units
Per Unit
200 - 480PHP58.644
500 - 980PHP54.372
1000 - 1980PHP50.021
2000 +PHP48.157

*price indicative

Packaging Options:
RS Stock No.:
151-440P
Mfr. Part No.:
STD4NK60ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

18.8nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Height

2.39mm

Width

6.73mm

Length

10.34mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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