Infineon, 32 bit ARM Cortex M7, XMC7200 Microcontroller, 350 MHz, 1024kB SRAM, 176-Pin TQFP
- RS Stock No.:
- 260-1111P
- Mfr. Part No.:
- XMC7200D-F176K8384AA
- Manufacturer:
- Infineon
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| 10 - 39 | PHP1,158.20 |
| 40 - 79 | PHP1,123.45 |
| 80 - 119 | PHP1,089.75 |
| 120 + | PHP1,057.06 |
*price indicative
- RS Stock No.:
- 260-1111P
- Mfr. Part No.:
- XMC7200D-F176K8384AA
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Series | XMC7200 | |
| Product Type | Microcontroller | |
| Package Type | TQFP | |
| Pin Count | 176 | |
| Device Core | ARM Cortex M7 | |
| Data Bus Width | 32bit | |
| Program Memory Size | 1024kB | |
| Maximum Clock Frequency | 350MHz | |
| RAM Size | 32kB | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Number of Programmable I/Os | 220 | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 24mm | |
| Minimum Supply Voltage | 2.7V | |
| Automotive Standard | No | |
| ADCs | 96 x 12 Bit | |
| Program Memory Type | SRAM | |
| Instruction Set Architecture | RISC | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Series XMC7200 | ||
Product Type Microcontroller | ||
Package Type TQFP | ||
Pin Count 176 | ||
Device Core ARM Cortex M7 | ||
Data Bus Width 32bit | ||
Program Memory Size 1024kB | ||
Maximum Clock Frequency 350MHz | ||
RAM Size 32kB | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Number of Programmable I/Os 220 | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 24mm | ||
Minimum Supply Voltage 2.7V | ||
Automotive Standard No | ||
ADCs 96 x 12 Bit | ||
Program Memory Type SRAM | ||
Instruction Set Architecture RISC | ||
Infineon Microcontroller, 1024 KB Program Memory size, 350 MHz Maximum Frequency - XMC7200D-F176K8384AA
This high-performance MOSFET from Infineon is designed for use in various power management applications. Featuring a TO-220 package, it provides robust performance with a maximum continuous drain current of 50A and a maximum drain-source voltage of 30V. With a low on-resistance and high power dissipation capability, this MOSFET ensures optimal efficiency in demanding electrical systems.
Features & Benefits
• Low drain-source resistance (7.8 mΩ) reduces power loss and enhances operational efficiency
• Maximum power dissipation of 68W ensures reliable operation under high-load conditions
• Wide gate threshold voltage range (1V to 2.2V) offers flexible control for different voltage levels
• High thermal stability with a maximum operating temperature of +175°C
• Enhancement-mode design for efficient switching and precise control of current flow
• Robust gate-source voltage tolerance (-20V to +20V) ensures protection against overvoltage
• Single-transistor configuration ideal for space-constrained designs
Applications
• Suitable for DC/DC converters and power supply
• Used in synchronous rectification for improved converter efficiency
• Ideal for motor control in industrial automation systems
• Employed in battery management systems for electric vehicles
• Applicable in renewable energy systems and consumer electronics
What is the advantage of the low drain-source resistance (RDS(on))?
The low RDS(on) minimises conduction losses and heat generation, improving the overall efficiency of power management systems and ensuring more energy is converted into useful work rather than being lost as heat.
How does the MOSFET handle high power dissipation?
With a maximum power dissipation rating of 68W, the device is designed to manage significant heat during operation, maintaining stability even in demanding conditions.
What is the significance of the gate threshold voltage range?
The wide gate threshold voltage range (1V to 2.2V) provides flexibility in circuit design, allowing the MOSFET to operate efficiently with various control voltages, making it suitable for different applications requiring precise voltage management.