STMicroelectronics STGD5H60DF IGBT, 10 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

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Subtotal (1 pack of 10 units)*

PHP490.00

(exc. VAT)

PHP548.80

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 90PHP49.00PHP490.00
100 - 490PHP48.02PHP480.20
500 - 990PHP47.06PHP470.60
1000 - 2490PHP46.12PHP461.20
2500 +PHP45.198PHP451.98

*price indicative

Packaging Options:
RS Stock No.:
906-2798
Mfr. Part No.:
STGD5H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

83 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.6 x 6.2 x 2.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Gate Capacitance

855pF

Energy Rating

221mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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