STMicroelectronics STGW30H60DFB IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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PHP362.74

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PHP406.26

(inc. VAT)

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2 - 8PHP181.37PHP362.74
10 - 38PHP177.745PHP355.49
40 - 98PHP174.19PHP348.38
100 - 198PHP170.70PHP341.40
200 +PHP167.29PHP334.58

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Packaging Options:
RS Stock No.:
860-7450
Mfr. Part No.:
STGW30H60DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

260 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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