onsemi, N-Channel IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole

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Subtotal 10 units (supplied in a tube)*

PHP3,774.30

(exc. VAT)

PHP4,227.20

(inc. VAT)

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Temporarily out of stock
  • Shipping from December 07, 2026
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Units
Per Unit
10 - 49PHP377.43
50 - 99PHP366.13
100 - 249PHP355.16
250 +PHP344.52

*price indicative

Packaging Options:
RS Stock No.:
864-8795P
Mfr. Part No.:
FGA60N65SMD
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

120A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

600W

Package Type

TO-3PN

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

140ns

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Series

Field Stop

Automotive Standard

No

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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