onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

PHP532.76

(exc. VAT)

PHP596.70

(inc. VAT)

Add to Basket
Select or type quantity
Limited stock
  • Plus 22 left, shipping from December 22, 2025
  • Plus 6 left, shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
2 - 8PHP266.38PHP532.76
10 - 38PHP258.39PHP516.78
40 +PHP250.645PHP501.29

*price indicative

Packaging Options:
RS Stock No.:
864-8782
Mfr. Part No.:
FGA40N65SMD
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.2 x 5 x 20.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Discrete IGBTs, Fairchild Semiconductor


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links