STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP

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PHP486.08

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PHP544.41

(inc. VAT)

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5 - 5PHP97.216PHP486.08
10 - 20PHP82.364PHP411.82
25 +PHP80.714PHP403.57

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Packaging Options:
RS Stock No.:
204-9872
Mfr. Part No.:
STGF20H65DFB2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

45 W

Package Type

TO-220FP

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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