STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP

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Subtotal (1 tube of 50 units)*

PHP4,977.70

(exc. VAT)

PHP5,575.00

(inc. VAT)

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Units
Per Unit
Per Tube*
50 - 50PHP99.554PHP4,977.70
100 - 200PHP96.567PHP4,828.35
250 - 450PHP93.67PHP4,683.50
500 - 950PHP90.86PHP4,543.00
1000 +PHP88.134PHP4,406.70

*price indicative

RS Stock No.:
204-9871
Mfr. Part No.:
STGF20H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

45 W

Package Type

TO-220FP

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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