STMicroelectronics, Type N-Channel IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole

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Subtotal 25 units (supplied in a tube)*

PHP3,347.55

(exc. VAT)

PHP3,749.25

(inc. VAT)

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Temporarily out of stock
  • Shipping from December 07, 2026
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Units
Per Unit
25 - 45PHP133.902
50 - 245PHP129.884
250 - 495PHP125.984
500 +PHP122.202

*price indicative

Packaging Options:
RS Stock No.:
829-7120P
Mfr. Part No.:
STGF15H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

30W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Length

10.4mm

Height

16.4mm

Series

Trench Gate Field Stop

Standards/Approvals

No

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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