STMicroelectronics, N-Channel IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole

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Subtotal (25 units, supplied in a tube)*

PHP3,451.60

(exc. VAT)

PHP3,865.80

(inc. VAT)

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  • Shipping from February 11, 2027
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Units
Per Unit
25 - 45PHP138.064
50 - 245PHP133.922
250 - 495PHP129.90
500 +PHP126.00

*price indicative

Packaging Options:
RS Stock No.:
829-7120P
Mfr. Part No.:
STGF15H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

30W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

16.4mm

Standards/Approvals

No

Length

10.4mm

Width

4.6mm

Series

Trench Gate Field Stop

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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