STMicroelectronics STGF15H60DF IGBT, 30 A 600 V, 3-Pin TO-220FP, Through Hole

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Subtotal (1 pack of 5 units)*

PHP587.10

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PHP657.55

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP117.42PHP587.10
25 - 45PHP113.90PHP569.50
50 - 245PHP110.48PHP552.40
250 - 495PHP107.164PHP535.82
500 +PHP103.948PHP519.74

*price indicative

Packaging Options:
RS Stock No.:
829-7120
Mfr. Part No.:
STGF15H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

30 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 16.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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