Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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PHP704.032

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PHP788.516

(inc. VAT)

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20 - 96PHP170.725PHP682.90
100 - 196PHP165.603PHP662.41
200 - 496PHP160.635PHP642.54
500 +PHP155.818PHP623.27

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Packaging Options:
RS Stock No.:
110-7756
Mfr. Part No.:
IKW30N60H3FKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Gate Capacitance

1630pF

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Energy Rating

1.72mJ

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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