IXYS IXYB82N120C3H1, N-Channel high Speed IGBT, 82 A 1.2 kV, 3-Pin PLUS264, Through Hole
- RS Stock No.:
- 808-0237
- Distrelec Article No.:
- 302-53-440
- Mfr. Part No.:
- IXYB82N120C3H1
- Manufacturer:
- IXYS
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- RS Stock No.:
- 808-0237
- Distrelec Article No.:
- 302-53-440
- Mfr. Part No.:
- IXYB82N120C3H1
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Maximum Continuous Collector Current Ic | 82A | |
| Product Type | high Speed IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 1040W | |
| Package Type | PLUS264 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | Planar | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Maximum Continuous Collector Current Ic 82A | ||
Product Type high Speed IGBT | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 1040W | ||
Package Type PLUS264 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series Planar | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.