IXYS, N-Channel high Speed IGBT, 100 A 1200 V, 3-Pin PLUS247, Through Hole
- RS Stock No.:
- 808-0225P
- Mfr. Part No.:
- IXYX100N120C3
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
PHP20,828.20
(exc. VAT)
PHP23,327.60
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- 9 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 49 | PHP2,082.82 |
| 50 - 99 | PHP1,948.56 |
| 100 - 249 | PHP1,909.61 |
| 250 + | PHP1,871.73 |
*price indicative
- RS Stock No.:
- 808-0225P
- Mfr. Part No.:
- IXYX100N120C3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | high Speed IGBT | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1150W | |
| Package Type | PLUS247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | International Standard Packages | |
| Width | 15.75mm | |
| Series | 1200V XPTTM IGBTs GenX3TM | |
| Length | 20.32mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type high Speed IGBT | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1150W | ||
Package Type PLUS247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals International Standard Packages | ||
Width 15.75mm | ||
Series 1200V XPTTM IGBTs GenX3TM | ||
Length 20.32mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Arduino Uno Rev 3 SMD
- RS PRO Stainless Steel Perforated Metal Sheet 500mm x 500mm, 0.55mm Thick
- RS PRO Combination Pliers Straight Tip, 34mm Jaw
- Belden Cat6 Ethernet Cable Grey PVC Sheath, 100m
- RS PRO Phillips Screwdriver 150 mm Blade, 270 mm Overall
- RS PRO 150 mm Stainless Steel Scissors
- Stanley Tylon 8m Tape Measure, Metric & Imperial
- Unistrut 41 x 41mm Slotted Galvanised Steel Strut, 2m Long