onsemi, N-Channel IGBT, 35 A 1200 V, 3-Pin TO-263, Surface

This image is representative of the product range

View all IGBTs
Bulk discount available
View bulk pricing options

Subtotal 10 units (supplied on a continuous strip)*

PHP3,130.60

(exc. VAT)

PHP3,506.30

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 240 unit(s) shipping from September 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
10 - 38PHP313.06
40 - 98PHP312.76
100 - 198PHP301.995
200 +PHP298.815

*price indicative

Packaging Options:
RS Stock No.:
807-6660P
Mfr. Part No.:
HGT1S10N120BNST
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current Ic

35A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

298W

Package Type

TO-263

Mount Type

Surface

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.45V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

NPT

Automotive Standard

No

Discrete IGBTs, 1000V and over, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy