STMicroelectronics STGF3NC120HD, Type N-Channel IGBT, 6 A 1200 V, 3-Pin TO-220, Through Hole

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Subtotal 25 units (supplied in a tube)*

PHP3,741.85

(exc. VAT)

PHP4,190.875

(inc. VAT)

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  • 1,315 unit(s) ready to ship from another location
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Units
Per Unit
25 - 95PHP149.674
100 - 245PHP145.932
250 - 1245PHP142.288
1250 +PHP138.732

*price indicative

Packaging Options:
RS Stock No.:
795-9094P
Mfr. Part No.:
STGF3NC120HD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

6A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

25W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.8V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.4mm

Height

16.4mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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