STMicroelectronics STGD18N40LZT4, Type N-Channel IGBT, 30 A 390 V, 3-Pin TO-252, Surface

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Subtotal 25 units (supplied on a continuous strip)*

PHP2,573.90

(exc. VAT)

PHP2,882.775

(inc. VAT)

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25 - 95PHP102.956
100 - 245PHP100.894
250 - 495PHP98.876
500 +PHP96.898

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Packaging Options:
RS Stock No.:
795-9019P
Mfr. Part No.:
STGD18N40LZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

390V

Maximum Power Dissipation Pd

150W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

16 V

Maximum Operating Temperature

175°C

Length

6.6mm

Standards/Approvals

AEC Q101

Series

STGD18N40LZ

Height

2.4mm

Width

6.2 mm

Automotive Standard

AEC-Q101

Energy Rating

180mJ

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.