STMicroelectronics, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole

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Subtotal 10 units (supplied in a tube)*

PHP3,749.00

(exc. VAT)

PHP4,198.90

(inc. VAT)

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  • Shipping from December 04, 2026
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Units
Per Unit
10 - 19PHP374.90
20 - 49PHP363.66
50 +PHP352.74

*price indicative

Packaging Options:
RS Stock No.:
792-5814P
Mfr. Part No.:
STGW80H65DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

469W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

H

Standards/Approvals

Lead (Pb) Free package, ECOPACK

Height

20.15mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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