STMicroelectronics, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal 20 units (supplied in a tube)*

PHP3,728.40

(exc. VAT)

PHP4,175.80

(inc. VAT)

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  • Shipping from July 02, 2027
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Units
Per Unit
20 - 38PHP186.42
40 - 98PHP180.83
100 - 498PHP175.415
500 +PHP170.16

*price indicative

Packaging Options:
RS Stock No.:
792-5798P
Mfr. Part No.:
STGW20H60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

167W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Series

Trench Gate Field Stop

Height

20.15mm

Standards/Approvals

RoHS

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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