STMicroelectronics, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal 26 units (supplied in a tube)*

PHP8,459.75

(exc. VAT)

PHP9,474.92

(inc. VAT)

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  • Shipping from December 09, 2026
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Units
Per Unit
26 - 98PHP325.375
100 - 248PHP318.87
250 - 498PHP312.495
500 +PHP306.245

*price indicative

Packaging Options:
RS Stock No.:
792-5791P
Mfr. Part No.:
STGW40H60DLFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

283W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

15.75mm

Series

H

Height

20.15mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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