STMicroelectronics, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal 50 units (supplied in a tube)*

PHP14,602.00

(exc. VAT)

PHP16,354.00

(inc. VAT)

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  • Plus 65 unit(s) shipping from August 03, 2026
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Units
Per Unit
50 - 145PHP292.04
150 - 295PHP283.28
300 - 595PHP274.782
600 +PHP266.542

*price indicative

Packaging Options:
RS Stock No.:
791-7643P
Mfr. Part No.:
STGW60V60DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

375W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.15mm

Standards/Approvals

No

Length

15.75mm

Series

Trench Gate Field Stop

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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