onsemi, N-Channel IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal 10 units (supplied in a tube)*

PHP3,405.70

(exc. VAT)

PHP3,814.40

(inc. VAT)

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  • 263 unit(s) ready to ship from another location
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Units
Per Unit
10 - 49PHP340.57
50 - 99PHP330.37
100 - 249PHP320.46
250 +PHP310.84

*price indicative

Packaging Options:
RS Stock No.:
759-9279P
Mfr. Part No.:
FGH40N60SMD
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

349W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Length

15.87mm

Height

4.82mm

Series

Field Stop

Width

20.82mm

Standards/Approvals

RoHS

Automotive Standard

No

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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