onsemi, N-Channel IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole

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Subtotal 10 units (supplied in a tube)*

PHP2,489.90

(exc. VAT)

PHP2,788.70

(inc. VAT)

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Last RS stock
  • Final 421 unit(s), ready to ship from another location

Units
Per Unit
10 - 49PHP248.99
50 - 99PHP229.17
100 - 249PHP222.10
250 +PHP220.08

*price indicative

Packaging Options:
RS Stock No.:
759-9257P
Mfr. Part No.:
FGAF40N60UFTU
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

100W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

130ns

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

UF

Width

23mm

Height

5.45mm

Standards/Approvals

AEC, RoHS

Length

26.5mm

Automotive Standard

No

COO (Country of Origin):
CN

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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