Semikron Danfoss SKM400GAL12E4 Single IGBT Module, 618 A 1200 V, 5-Pin SEMITRANS3, Panel Mount
- RS Stock No.:
- 687-4989
- Mfr. Part No.:
- SKM400GAL12E4
- Manufacturer:
- Semikron Danfoss
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP19,441.77
(exc. VAT)
PHP21,774.78
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 12 unit(s) shipping from April 08, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP19,441.77 |
| 10 - 19 | PHP18,858.51 |
| 20 - 49 | PHP18,275.26 |
| 50 - 249 | PHP17,886.43 |
| 250 + | PHP17,497.60 |
*price indicative
- RS Stock No.:
- 687-4989
- Mfr. Part No.:
- SKM400GAL12E4
- Manufacturer:
- Semikron Danfoss
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron Danfoss | |
| Maximum Continuous Collector Current | 618 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | SEMITRANS3 | |
| Configuration | Single | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 5 | |
| Transistor Configuration | Single | |
| Dimensions | 106.4 x 61.4 x 30.5mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Semikron Danfoss | ||
Maximum Continuous Collector Current 618 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type SEMITRANS3 | ||
Configuration Single | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 5 | ||
Transistor Configuration Single | ||
Dimensions 106.4 x 61.4 x 30.5mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.