STMicroelectronics, Type N-Channel IGBT, 200 A 600 V, 4-Pin ISOTOP, Clamp

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Subtotal 2 units (supplied in a tube)*

PHP4,132.14

(exc. VAT)

PHP4,628.00

(inc. VAT)

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  • 576 unit(s) ready to ship from another location
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Units
Per Unit
2 - 4PHP2,066.07
5 - 9PHP2,004.07
10 - 19PHP1,943.95
20 +PHP1,885.63

*price indicative

Packaging Options:
RS Stock No.:
686-8348P
Mfr. Part No.:
STGE200NB60S
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

200A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

600W

Package Type

ISOTOP

Mount Type

Clamp

Channel Type

Type N

Pin Count

4

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Height

12.2mm

Series

Powermesh

Length

38.2mm

Standards/Approvals

ECOPACK, JESD97

Automotive Standard

No

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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