Infineon IKP04N60TXKSA1 IGBT, 8 A 600 V, 3-Pin PG-TO220-3, Through Hole
- RS Stock No.:
- 273-7451
- Mfr. Part No.:
- IKP04N60TXKSA1
- Manufacturer:
- Infineon
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- RS Stock No.:
- 273-7451
- Mfr. Part No.:
- IKP04N60TXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 8A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 42W | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.95mm | |
| Series | TrenchStop | |
| Height | 4.57mm | |
| Width | 10.36mm | |
| Standards/Approvals | Pb-Free, JEDEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 8A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 42W | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.95mm | ||
Series TrenchStop | ||
Height 4.57mm | ||
Width 10.36mm | ||
Standards/Approvals Pb-Free, JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon IGBT has TRENCHSTOP and Field stop technology with soft, fast recovery anti parallel emitter controlled HE diode. This IGBT is qualified according to JEDEC1 for target applications. It has positive temperature coefficient in VCE sat. This IGBT is designed for frequency converter and drives.
RoHS compliant
High ruggedness
Low gate charge
Pb free lead plating
Stable temperature behaviour
Very high switching speed
Very low VCEsat and low EMI
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