Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

PHP546.84

(exc. VAT)

PHP612.46

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 955 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 45PHP109.368PHP546.84
50 - 95PHP106.086PHP530.43
100 - 245PHP99.72PHP498.60
250 - 495PHP90.744PHP453.72
500 +PHP79.854PHP399.27

*price indicative

Packaging Options:
RS Stock No.:
258-7725
Mfr. Part No.:
IKB10N60TATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

110 W

Number of Transistors

1

Package Type

TO-263-3

Configuration

Single Collector, Single Emitter, Single Gate

The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.

Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links