Bourns BIDW50N65T IGBT, 100 A 650 V TO-247

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Subtotal 10 units (supplied in a tube)*

PHP3,932.90

(exc. VAT)

PHP4,404.80

(inc. VAT)

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  • 1,098 unit(s) ready to ship from another location
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Units
Per Unit
10 - 48PHP393.29
50 - 98PHP371.705
100 - 248PHP323.37
250 +PHP316.795

*price indicative

Packaging Options:
RS Stock No.:
253-3509P
Mfr. Part No.:
BIDW50N65T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current Ic

100A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Package Type

TO-247

Maximum Gate Emitter Voltage VGEO

±20 V (Gate-Emitter Voltage VGE )

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

RoHS compliant


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