Bourns IGBT, 30 A 600 V TO-247

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Subtotal 10 units (supplied in a tube)*

PHP2,830.45

(exc. VAT)

PHP3,170.10

(inc. VAT)

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  • 2,218 unit(s) shipping from October 05, 2026
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Units
Per Unit
10 - 48PHP283.045
50 - 98PHP274.555
100 - 248PHP266.315
250 +PHP258.325

*price indicative

Packaging Options:
RS Stock No.:
253-3503P
Mfr. Part No.:
BIDNW30N60H3
Manufacturer:
Bourns
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Brand

Bourns

Product Type

IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

230W

Package Type

TO-247

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Series

BIDNW30N60H3

Standards/Approvals

RoHS

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Low switching loss

Fast switching

RoHS compliant

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